Effects of Si reconstruction on growth mode in Al/Si(111) studied by scanning tunneling microscopy

Surface Science

Volumn 357-358, Issue , 1996, Pages 825-829

  Uemura, Akira ^a   Ohkita, Akihiro ^a   Inaba, Hitoshi ^a   Hasegawa, Shigehiko ^a   Nakashima, Hisao ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Aluminum; Epitaxy; Low index single crystal surfaces; Metal semiconductor interfaces; Roughness, and topography; Scanning tunneling microscopy; Silicon; Surface structure, morphology

Indexed keywords

ADSORPTION; ALUMINUM; DEPOSITION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; SURFACES;

CLUSTERS; LOW INDEX SINGLE CRYSTAL SURFACES; METAL SEMICONDUCTOR INTERFACES; REACTIVITY; SURFACE RECONSTRUCTION; SURFACE TOPOGRAPHY;

SURFACE STRUCTURE;

EID: 4243302193     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00271-3     Document Type: Article

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