High quality epitaxial Si films onto γ-Al2O3 (111)/Si (111) substrates using Al predeposition layers

Applied Physics Letters

Volumn 68, Issue 21, 1996, Pages 3001-3003

  Jung, Young Chul ^a   Wado, Hiroyuki ^a   Ohtani, Kentaro ^a   Ishida, Makoto ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041849895     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116677     Document Type: Article

References (9)

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