Novel structure in Ge/Si epilayers grown at low temperature

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 182-184

  Cheng, H H ^a   Chia, C T ^b   Markov, V A ^c   Guo, X J ^d   Chen, C C ^a   Peng, Y H ^a   Kuan, C H ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^c TOHOKU UNIVERSITY   (Japan)

^d NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; STRAIN; STRESS ANALYSIS; WETTING;

EPILAYERS; STREE-DRIVEN INTERMIXING;

SEMICONDUCTING FILMS;

EID: 0034224494     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00802-6     Document Type: Article

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