Molecular-beam epitaxial growth of (001) Cr/Al/Cr/Al quadrilayer superlattice containing one-monolayer-thick Cr layers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 A, 2000, Pages 4174-4175

  Kingetsu, Toshiki ^a,c   Kamada, Yasuhiro ^b   Yamamoto, Masahiko ^b  

^a RIGAKU CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c Nisshin Steel Co Ltd   (Japan)

Author keywords

Al Cr superlattice; Critical thickness; Epitaxial growth; Interplanar spacing; Molecular beam epitaxy; Reflection high energy electron diffraction; Stranski Krastanov mode; Underlayer; X ray diffraction

Indexed keywords

DEPOSITION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; STRUCTURE (COMPOSITION); SURFACE STRUCTURE; THICKNESS MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

INTERPLANAR SPACING; QUADRILAYER SUPERLATTICE; STRANSKI-KRASTANOV MODE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0034216101     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4174     Document Type: Article

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