Solid-state amorphization in Al/Pd multilayer during near-room-temperature molecular-beam deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 6 A, 1999, Pages 3675-3681

  Kingetsu, Toshiki ^a   Kamada, Yasuhiro ^b   Yamamoto, Masahiko ^b  

^a RIGAKU CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AMORPHIZATION; COMPOSITION EFFECTS; DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; INTERDIFFUSION (SOLIDS); MULTILAYERS; PALLADIUM; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; X RAY CRYSTALLOGRAPHY;

MOLECULAR NEAM DEPOSITIONS; SOLID-STATE AMORPHIZATION;

METALLIC FILMS;

EID: 0032640196     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3675     Document Type: Article

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13. 14) solid solution exists only in the Pd-rich side. In the Al-rich side, a compound(s) would be formed. It (they) will not have a lattice parameter(s) that fit(s) to the in-plane lattice constant of the Pd buffer layer, which leads to (100) epitaxy.
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