Optical proximity correction by grey tone photolithography

Microelectronic Engineering

Volumn 53, Issue 1, 2000, Pages 153-156

  Cui, Zheng ^a,b   Du, Jinglei ^a   Huang, Qizhong ^a   Su, Jingqin ^a   Guo, Yongkang ^a  

^a SICHUAN UNIVERSITY   (China)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; ELECTRON BEAM LITHOGRAPHY; IMAGE ANALYSIS; INTEGRATED CIRCUIT LAYOUT; MASKS; REACTIVE ION ETCHING; VLSI CIRCUITS;

CRITICAL DIMENSION; GREY TONE PHOTOLITHOGRAPHY; OPTICAL PROXIMITY CORRECTION; VLSI PHOTOLITHOGRAPHY;

PHOTOLITHOGRAPHY;

EID: 0034206232     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00285-9     Document Type: Article

References (7)

1. [1] O.W.Otto, J.G.Garofalo, C.M.Yuan etc, Proc. SPIE, 2197, 278 (1994)
2. [2] N.Cobb and A.Zakhor, Proc. SPIE, 2726, 208, (1996)
3. [3] J.Su, J.Du, J.Yao, Y.Guo and Z.Cui, SPIE, 3680, 879 (1999)
4. [4] C.Wu, U.S.Patent No.5,078,711 (1992)
5. [5] W.Daschner, P.Long, R.Stein, S.H.Lee and C.Wu, Proc. SPIE, 2689, 153 (1996)
6. [6] K.Reimer, H.J.Quenzer, M.Jurss and B.Wagner, SPIE, 3008, 279 (1997)
7. [7] Y.Oppliger, P.Sixt, J.M.Stanffer, J.M.Mayor, P.Rehnault and G.Voirin, Microelectronic Engineering, 23, p.449, 1994