Radiation damage studies with star silicon drift detectors

IEEE Transactions on Nuclear Science

Volumn 47, Issue , 2000, Pages 903-907

  Takahashi, J ^a   Bellwied, R ^b   Beuttenmueller, R ^c   Chen, W ^c   Dezillie, B ^c   Eremin, V ^f   Elliot, D ^c   Hoffmann, G W ^e   Huang, W ^c   Humanic, T ^d   Ilyashenko, I ^f   Kotov, I V ^d   Kuczcwski, P ^c   Leouhasdt, W ^c   Li, Z ^c   Lynn, D ^c   Pandey, S U ^b   Schambach, J ^e   Soja, R ^c   Sugarbaker, E ^d   Zhao, L J ^c   Willson, R M ^d   more..

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b WAYNE STATE UNIVERSITY   (United States)

^c Brookhavcn National Lahoratory   (United States)

^d OHIO STATE UNIVERSITY   (United States)

^e UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^f IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COLLIDING BEAM ACCELERATORS; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRON DEVICES; GAMMA RAYS; HEAVY IONS; NEUTRON IRRADIATION; PROTON IRRADIATION; SEMICONDUCTOR DEVICE TESTING; VOLTAGE MEASUREMENT;

FRONT-END ELECTRONICS; INNER TRACKING DETECTOR; RELATIVISTIC HEAVY ION COLLIDER; SILICON DRIFT DETECTOR;

RADIATION DAMAGE;

EID: 0034206117     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.856715     Document Type: Article

References (14)

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