Fast Neutron Radiation Effects in Silicon Detectors Fabricated by Different Thermal Oxidation Processes

IEEE Transactions on Nuclear Science

Volumn 39, Issue 4, 1992, Pages 577-583

  Li, Zheng ^a   Kraner, H W ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOS DEVICES; NEUTRONS; RADIATION EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES;

FAST NEUTRONS; THERMAL OXIDATION;

RADIATION DETECTORS;

EID: 0026904011     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.159668     Document Type: Article

References (13)

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