Role of buried ultra thin interlayer silicide on the growth of Ni film on Si(100) substrate

Applied Physics A: Materials Science and Processing

Volumn 70, Issue 6, 2000, Pages 681-684

  Sarkar, D K ^a   Falke, M ^a   Giesler, H ^a   Teichert, S ^a   Beddies, G ^a   Hinneberg, H J ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COBALT; ENTHALPY; FILM GROWTH; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; NICKEL; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; SILICIDE; ULTRA THIN AMORPHOUS INTERLAYER; X RAY REFLECTIVITY MEASUREMENT;

ULTRATHIN FILMS;

EID: 0034205751     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050015     Document Type: Article

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