Epitaxial growth of Bi2Sr2CuOx films onto Si(001) by molecular beam epitaxy

Applied Surface Science

Volumn 159, Issue , 2000, Pages 161-166

  Tambo, T ^a   Arakawa, T ^a   Shimizu, A ^a   Hori, S ^a   Tatsuyama, C ^a  

^a UNIVERSITY OF TOYAMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BISMUTH COMPOUNDS; CRYSTAL ORIENTATION; FILM GROWTH; HIGH TEMPERATURE SUPERCONDUCTORS; MOLECULAR BEAM EPITAXY; OXIDE SUPERCONDUCTORS; OXYGEN; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

COEVAPORATION METHOD;

SUPERCONDUCTING FILMS;

EID: 0034204978     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00073-8     Document Type: Article

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