Peak width analysis of current-voltage characteristics of triple-barrier resonant tunneling diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 6 A, 2000, Pages 3314-3318

  Nagase, Masanori ^a   Suhara, Michihiko ^a,b   Miyamoto, Yasuyuki ^a   Furuya, Kazuhito ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TOKYO METROPOLITAN UNIVERSITY   (Japan)

Author keywords

GaInAs InP; Organo metallic; Resonant tunneling diodes; Structural inhomogeneity; Triple barrier structure; Vapor phase epitaxy

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

PEAK WIDTH ANALYSIS; TRIPLE-BARRIER RESONANT TUNNELING DIODES (TBRTD);

TUNNEL DIODES;

EID: 0034204733     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3314     Document Type: Article

References (7)

1. M. Yamaguchi, K. Masukawa, N. Ikeo, N. Sawaki, K. Fujii and H. Goto: Physica B 227 (1996) 387.
2. M. Suhara, R. Takemura and K. Furuya: Jpn. J. Appl. Phys. 34 (1995) 4452.
3. T. Hiraoka, I. Uchida, S. Ikawa, T. Kitada, S. Shimomura and S. Hiyamizu: Ext. Abstr. (46th Spring Meet. 1999) Japan Society of Applied Physics and Related Society, 28a-Y [in Japanese].
4. T. Nakagawa, T. Fujita and Y. Matsumoto: Jpn. J. Appl. Phys. 26 (1987) L980.
5. T. Oobo, R. Takemura, K. Sato, M. Suhara, Y. Miyamoto and K. Furuya: Jpn. J. Appl. Phys. 37 (1998) 445.
6. M. Suhara, C. Nagao, H. Honji, Y. Miyamoto, K. Furuya and R. Takemura: J. Cryst. Growth 79 (1997) 18.
7. R. Tsu and L. Esaki: Appl. Phys. Lett. 22 (1973) 562.