Influence of SiC cover layer of Si substrate on properties of cubic SiC films prepared by hydrogen plasma sputtering

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 7 A, 1999, Pages

  Sun, Yong ^a   Ayabe, Tokihiro ^a   Miyasato, Tatsuro ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; FILM GROWTH; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SPUTTERING; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

HYDROGEN PLASMA SPUTTERING;

SEMICONDUCTING FILMS;

EID: 0032594971     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l714     Document Type: Article

References (17)