Facet growth due to attractive step-step interactions on vicinal Si(113)

Surface Science

Volumn 452, Issue 1-3, 2000, Pages

  Sudoh, K ^a   Iwasaki, H ^a   Williams, Ellen D ^b  

^a OSAKA UNIVERSITY   (Japan)

^b Bldg 142   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL GROWTH; CRYSTAL ORIENTATION; MATHEMATICAL MODELS; MORPHOLOGY; NANOSTRUCTURED MATERIALS; NUCLEATION; PHASE TRANSITIONS; RELAXATION PROCESSES; SINGLE CRYSTALS; SURFACE ROUGHNESS; SURFACE STRUCTURE;

FACETING; HIGH INDEX SINGLE CRYSTAL SURFACE; STEPPED SINGLE CRYSTAL SURFACE; SURFACE RECONSTRUCTION;

SEMICONDUCTING SILICON;

EID: 0034188497     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00395-2     Document Type: Article

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