Normal-incidence SiGe/Si photodetectors with different buffer layers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1251-1253

  Jiang, R L ^a   Lo, Z Y ^a   Chen, W M ^a   Zang, L ^a   Zhu, S M ^a   Liu, X B ^a   Cheng, X M ^a   Chen, Z Z ^a   Chen, P ^a   Han, P ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; VOLTAGE MEASUREMENT; X RAY CRYSTALLOGRAPHY;

BUFFER LAYERS; EXTENDED RESISTANCE DEPTH DISTRIBUTION; PHOTORESPONSE; SILICON GERMANIDE;

PHOTODETECTORS;

EID: 0034187914     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591370     Document Type: Article

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