Analysis of RHEED intensities during formations of the CaF2/Si(111) and MgO/YSi2-x/Si(100) interface

Vacuum

Volumn 57, Issue 2, 2000, Pages 229-236

  Mazurek, Piotr ^a   Daniluk, Andrzej ^a   Paprocki, Krzysztof ^a  

^a Institute of Physics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CALCIUM COMPOUNDS; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; MAGNESIA; MOLECULAR BEAM EPITAXY; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SUBSTRATES;

CALCIUM FLUORIDE; REACTIVE DEPOSITION EPITAXY;

INTERFACES (MATERIALS);

EID: 0034187613     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(00)00128-7     Document Type: Article

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