RHEED intensity oscillations observed during the growth of YSi2-x on Si (111) substrates

Surface Science

Volumn 391, Issue 1-3, 1997, Pages 226-236

  Daniluk, A ^a   Mazurek, P ^a   Paprocki, K ^a   Mikolajczak P ^a  

^a Fac Chem Maria Curie S   (Poland)

Author keywords

Growth; Reactive deposition epitaxy; Reflection high energy electron diffraction; Silicon; Yttrium silicide

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; DEPOSITION; EPITAXIAL GROWTH; MATHEMATICAL MODELS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; YTTRIUM COMPOUNDS;

REACTIVE DEPOSITION EPITAXY; SCHRODINGER EQUATION; YTTRIUM SILICIDE;

SEMICONDUCTOR GROWTH;

EID: 0031270208     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00486-X     Document Type: Article

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