Properties of C-doped LT-GaAs grown by MBE using CBr4

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 217-220

  Liu, W K ^a   Bacher, K ^a   Towner, F J ^a   Stewart, T R ^a   Reed, C ^a   Specht, P ^b   Lutz, R C ^b   Zhao, R ^b   Weber, E R ^b  

^a Quantum Epitaxial Designs Inc   (United States)

^b Lawrence Berkeley National Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; CRYSTAL DEFECTS; MOLECULAR BEAM EPITAXY; RADIATION HARDENING; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

ANTISITE DEFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032657077     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01325-6     Document Type: Article

References (13)

1. Smith F.W., Calawa A.R., Chen C.L., Manfra M.J., Mahoney L.J. IEEE Electron Dev. Lett. 9:1988;77.
2. B.J. Lin, D.E. Mars, T.S. Low, Presented at 1988 Device Research Conf., Boulder, CO.
3. Weatherford T.R., Marshall P.W., Marshall C.J., Fouts D.J., Mathes B., LaMacchia M. IEEE Trans. Nucl. Sci. NS-44:1997;2298.
4. Smith F.W., Le H.Q., Diadiuk V., Hollis M.A., Calawa A.R., Gupta S., Frankel M., Dykaar D.R., Mourou G.A., Hsiang T.Y. Appl. Phys. Lett. 54:1989;890.
5. Harmon E.S., Melloch M.R., Woodall J.M., Nolte D.D., Otsuka N., Chang C.L. Appl. Phys. Lett. 63:1993;2248.
6. Look D.C. Thin Solid Films. 231:1993;61.
7. Sosnowski T.S., Norris T.B., Wang H.H., Grenier P., Whitaker J.F., Sung C.Y. Appl. Phys. Lett. 70:1997;3245.
8. Z. Liliental-Weber, J. Ager III, D. Look, X.W. Lin, X. Liu, J. Nishio, K. Nichols, W. Schaff, W. Swider, K. Wang, J. Washburn, E.R. Weber, J. Whitaker, in: M. Godlewski (Ed.), Proc. 8th Conf. on Semiinsulating III-V Materials, World Scientific, Singapore, 1994, p. 305.
9. Bliss D.E., Walukiewicz W., Chan K.T., Ager III J.W., Tanigawa S., Haller E.E. Mater. Res. Soc. Symp. Proc. 241:1992;93.
10. Melloch M.R., Otsuka N., Mahalingam K., Chang C.L., Woodall J.M., Petit G.D., Kirchner P.D., Cardone F., Warren A.C., Notle D.D. J. Appl. Phys. 72:1992;3509.
11. Specht P., Sohn H., Luysberg M., Prasad A., Gebauer J., Krause-Rehberg R., Weber E.R. Mater. Sci. Forum. 258-263:1997;951.
12. Keucha T.F., Redwing J.M. J. Crystal Growth. 145:1994;382.
13. Liliental-Weber Z. Mater. Res. Soc. Symp. Proc. 241:1992;101.