Fabrication of GaAs quantum wires by natural selective doping and its characterization by electrostatic force microscope

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1675-1679

  Yoh, Kanji ^a   Takabayashi, Shingo ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTROSTATICS; MICROSCOPES; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ELECTROSTATIC FORCE MICROSCOPY (EFM); SELECTIVE DOPING; SELF ORGANIZED QUANTUM WIRES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0034187382     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591450     Document Type: Article

References (14)

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14. It will be published elsewhere.