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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1443-1447

Precise and efficient ex situ technique for determining compositions and growth rates in molecular-beam epitaxy grown semiconductor alloys

(4) Peiris, F C a Lee, S a Bindley, U a Furdyna, J K a

a UNIVERSITY OF NOTRE DAME (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; LATTICE CONSTANTS; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; PRISMS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; TERNARY SYSTEMS; THIN FILMS; X RAY ANALYSIS;

PRISM COUPLERS;

SEMICONDUCTING FILMS;

EID: 0034187285 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.591400 Document Type: Article

Times cited : (5)

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