Optical and electronic properties of SiGeC alloys grown on Si substrates

Journal of Crystal Growth

Volumn 157, Issue 1-4, 1995, Pages 386-391

  Kolodzey, J ^a   Berger, P R ^a   Orner, B A ^a   Hits, D ^a   Chen, F ^a   Khan, A ^a   Shao, X ^a   Waite, M M ^b   Shah, S Ismat ^b   Swann, C P ^a   Unruh, K M ^a  

^a UNIVERSITY OF DELAWARE   (United States)

^b DUPONT COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; LIGHT TRANSMISSION; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON ALLOYS; SUBSTRATES; THERMAL EFFECTS;

SILICON GERMANIUM CARBON ALLOYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0029633682     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00329-0     Document Type: Article

References (19)

1. Low-temperature cleaning processes for Si molecular beam epitaxy
2. Photoluminescence investigations of graded, totally relaxed GexSi1-x structures