Channeling-induced asymmetric distortion of depth profiles from polycrystalline-TiN/Ti/TiN(001) trilayers during secondary ion mass spectrometry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1369-1374

  Ramanath, G ^a   Greene, J E ^b   Petrov, I ^b   Baker, J E ^b   Allen, L H ^b   Gillen, G ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CESIUM; INTERFACES (MATERIALS); ION BEAMS; SECONDARY ION MASS SPECTROMETRY; TITANIUM; TITANIUM NITRIDE;

CHANNELING-INDUCED ASYMMETRIC DISTORTION;

POLYCRYSTALLINE MATERIALS;

EID: 0034186867     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591387     Document Type: Article

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