Surface microcharacterization of silicon wafers by the light-beam-induced current technique in the planar configuration and by attenuated total reflection spectroscopy

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

Volumn 80, Issue 4, 2000, Pages 579-585

  Spadoni, S ^a   Acciarri, M ^a   Narducci, D ^a   Pizzini, S ^a  

^a Istituto Nazionale per la Fisica della Materia Milan   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034175296     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/014186300255230     Document Type: Article

References (8)

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2. BOONEKAMP, E. P., KELLY, J. J., VAN DE VEN, J., and SONDAG, A. H. M., 1994, J. appl. Phys., 75, 8121.
3. GRÄF, D., GRUNDNER, M., and SCHULZ, R., 1988, J. Vac. Sci. Technol. A, 7, 808.
4. HARRICK, N. J., 1987, Internal Reflection Spectroscopy (New York: Harrick Scientific Corporation), p. 250.
5. HATTORI, T., 1994, Proceedings of the Second International Symposium on Ultra-Clean Processing of Silicon Surfaces, edited by M. Heyns, M. Meuris and P. Mertens (Leuven: Acco), p. 13.
6. MERTENS, P. W., BEARDA, T., HOUSSA, M., LOEWENSTEIN, L. M., CORNELISSEN, I., DE GENDT, S., KEHIS, K., TEERLINCK, I., VOS, R., MEURIS, M., and HEYNS, M. M., 1999, Microelectron, Engng, 48, 199.
7. MONES, G., 1998, MS Thesis, University of Milan.
8. SPADONI, S., ACCIARRI, M., BARBI, G., and PIZZINI, S., 1998, Solid St. Phenomena, 63-64, 123.