Luminescence quenching in 150 keV proton irradiated a-SiC:H

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 578-582

  Reitano, R ^a,b   Musumeci, P ^a,b   Baeri, P ^a,b   Foti, G ^a,b  

^a UNIVERSITY OF CATANIA   (Italy)

^b INFM   (Italy)

Author keywords

Defects; Ion irradiation; Photoluminescence; Silicon carbon alloys

Indexed keywords

ANNEALING; CHARGE CARRIERS; CRYSTAL DEFECTS; ELECTRON ABSORPTION; ENERGY GAP; ION BEAMS; ION BOMBARDMENT; PHOTOLUMINESCENCE; PROTON IRRADIATION; QUENCHING; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS;

PHOTOTHERMAL DEFLECTION SPECTROSCOPY (PDS);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033513892     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00713-7     Document Type: Article

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