1/f noise in p-type amorphous silicon

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 2, 2000, Pages 661-664

  Johanson, Robert E ^a   Kasap, S O ^a   Gaspari, Franco ^b   Yeghikyan, Davit ^b   Zukotynski, Stefan ^b  

^a UNIVERSITY OF SASKATCHEWAN   (Canada)

^b UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC NOISE MEASUREMENT; BAND STRUCTURE; DOPING (ADDITIVES); ELECTRIC CONDUCTANCE; ELECTRIC VARIABLES MEASUREMENT; FERMI LEVEL; TEMPERATURE;

CONDUCTANCE FLUCTUATIONS; GENERATION RECOMBINATION NOISE; NOISE POWER DENSITY;

AMORPHOUS SILICON;

EID: 0034156521     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582244     Document Type: Article

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