Atomic force microscopy study of ZnSe/GaAs heteroepitaxy processes by metalorganic vapour phase epitaxy

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 371-376

  Uesugi, Katsuhiro ^a   Suzuki, Hideki ^a   Nashiki, Hiroyuki ^a   Obinata, Toshio ^a   Suemune, Ikuo ^a   Kumano, Hidekazu ^a   Nakahara, Jun'ichiro ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

AFM; GaAs; Heteroepitaxy; MOVPE; Stoichiometry; ZnSe

Indexed keywords

ARSENIC; ATOMIC FORCE MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE CLEANING; SURFACES; THERMAL EFFECTS; THIN FILMS; X RAY DIFFRACTION;

HETEROEPITAXY; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031547185     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00833-1     Document Type: Article

References (8)

1. R.L. Gunshor, L.A. Kolodziejski, M.R. Melloch, M. Vaziri, C. Choi and N. Otsuka, Appl. Phys. Lett. 50 (1987) 200.
2. T. Yao, M. Fujimoto, K. Uesugi and S. Kamiyama, Growth and Optical Properties of Wide-Gap II-VI Low-Dimensional Semiconductors, eds. T.C. McGill et al. (Plenum Press. New York, 1989) pp. 209-218.
3. D. Li, J.M. Gonsalves, N. Otsuka, J. Qui, M. Kobayashi and R.L. Gunshor, Appl. Phys. Lett. 57 (1990) 449.
4. J. Qui, Q.-D. Qian, R.L. Gunshor, M. Kobayashi, D.R. Menke, D. Li and N. Otsuka, Appl. Phys. Lett. 56 (1990) 1272.
5. S. Guha, H. Munekata and L.L. Chang, J. Appl. Phys. 73 (1993) 2294.
6. S. Saito, P.J. Parbrook, S., Nakamura, Y. Nishikawa and G. Hatakoshi, Extended Abstracts of Int. Symposium on Blue Laser and Light Emitting Devices, Chiba, 1996, pp. 66-69.
7. Y. Kobayashi, K. Uwai and N. Kobayashi, Jpn. J. Appl. Phys. 34 (1995) 3008.
8. K. Hamaoka, I. Suemune, K. Fujii, T. Koui, A. Kishimoto and M. Yamanishi, Jpn. J. Appl. Phys. 30 (1991) L1579.