Inductively coupled, point-of-use plasma abatement of perfluorinated compounds and hydrofluorinated compounds from etch processes utilizing O2 and H2O as additive gases

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 2, 2000, Pages 393-400

  Tonnis, Eric J ^a   Graves, David B ^a   Vartanian, Victor H ^b   Beu, Laurie ^b   Lii, Tom ^b   Jewett, Rusty ^c  

^a University of California   (United States)

^b MOTOROLA INC   (United States)

^c Litmas Incorporated   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; DISSOCIATION; OXYGEN; PLASMA APPLICATIONS; REACTIVE ION ETCHING; WATER;

DESTRUCTION AND REMOVAL EFFICIENCIES; HYDROFLUOROCARBONS; INDUCTIVELY COUPLED PLASMA ABATEMENT DEVICE; PECLET NUMBER; PERFLUOROCARBONS; POINT OF USE PLASMA ABATEMENT; WAFER METROLOGY;

FLUOROCARBONS;

EID: 0034155988     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582199     Document Type: Article

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