Very high frequency capacitively coupled discharges for large area processing

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 5, 1996, Pages 2790-2794

  Meyyappan, M ^a   Colgan, M J ^b  

^a Scientific Research Associates Inc   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030500588     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580201     Document Type: Article

References (25)

1. R. Horwath, Abstracts of the Workshop on Performance and Scalability of Plasma Reactors for Semiconductor and Flat Panel Manufacturing, 48th Gaseous Electronics Conference, Berkeley, CA, 1995 (unpublished).
2. W. W. Yao, in Ref. 1.
3. High Density Plasma Sources, edited by O. A. Popov (Noyes, Park Ridge, NJ, 1996).
4. U.S. Display Consortium Annual Report, USDC, San Jose, 1994 (unpublished).
5. M. J. Colgan and M. Meyyappan, "Very High Frequency Capacitive Plasma Sources," in Ref. 3.
6. M. J. Colgan, M. Meyyappan, and T. R. Govindan, Proceedings of the 10th Symposium on Plasma Processing (The Electrochemical Society, Pennington, NJ, 1994).
7. M. J. Colgan, M. Meyyappan, and D. E. Murnick, Plasma Sources Sci. Technol. 3, 181 (1994).
8. J. Wagner, M. J. Colgan, and D. E. Murnick (unpublished).
9. H. Curtins, N. Wyrsch, and A. V. Shah, Electron. Lett. 23, 228 (1987).
10. H. Chatham, P. Bhat, A. Benson, and C. Matovich, J. Non-Cryst. Solids 115, 201 (1989).
11. A. A. Howling, J.-L. Dorier, Ch. Hollenstein, U. Kroll, and F. Finger, J. Vac. Sci. Technol. A 10, 1980 (1992).
12. J. Dutta, V. Kroll, P. Chabloz, A. V. Shah, A. A. Howling, J.-L. Dorier, and Ch. Hollenstein, J. Appl. Phys. 72, 3220 (1992).
13. K. M. Kalpakjian, M. A. Lieberman, and W. G. Oldham, J. Vac. Sci. Technol. B 12, 1351 (1994).
14. M Surendra and D. B. Graves, Appl. Phys. Lett. 59, 2091 (1991).
15. C. M. Ferreira and J. Loureiro, J. Phys. D: Appl. Phys. 17, 1175 (1984).
16. M. Moison, C. Barbeau, R. Claude, C. M. Ferreira, J. Margot, J. Paraszczak, A. B. Sá, G. Suavé, and M. R. Wertheimer, J. Vac. Sci. Technol. B 9, 8 (1991).
17. V. A. Godyak, Soviet Radiofrequency Discharge Research, Delphic Associates, Inc., Falls Church, VA (1986).
18. M. Meyyappan and T. R. Govindan, J. Appl. Phys. 74, 2250 (1993).
19. M. Meyyappan, Plasma Process Modeling, in Computational Modeling in Semiconductor Processing, edited by M. Meyyappan (Artech House, Norwood, MA, 1994).
20. M. Meyyappan and T. R. Govindan, J. Appl. Phys. (submitted).
21. T. R. Govindan and M. Meyyappan, J. Res. Natl. Inst. Stand. Technol. 100, 463 (1995).
22. See a special issue on Gaseous Electronics Conference RF Reference Cell, J. Res. Natl. Inst. Stand. Technol. 100 (1995).
23. L. Z. Overzet and M. B. Hopkins, Appl. Phys. Lett. 63, 2484 (1993).
24. D. Lymperopoulos and D. J. Economou, Appl. Phys. Lett. 63, 2478 (1993).
25. M. Meyyappan and T. R. Govindan, IEEE Trans. Plasma Sci. 24, 119 (1996).