Electrochemical analysis of SiC power devices using physically-based device simulation

Solid-State Electronics

Volumn 44, Issue 2, 2000, Pages 359-368

  Lades, M ^a   Wachutka, G ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC ADMITTANCE; ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL MODELS; SILICON CARBIDE;

ELECTROTHERMAL ANALYSIS; IMPURITY KINETICS; POWER DEVICES; THERMAL ADMITTANCE SPECTROSCOPY;

POWER ELECTRONICS;

EID: 0034140418     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00243-9     Document Type: Article

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