Si atomic-layer epitaxy using thermally cracked Si2H6

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2390-2392

  Suda, Yoshiyuki ^a   Misato, Yasuhiro ^a   Shiratori, Daiju ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

ALE; Atomic layer epitaxy; Ge; Si; Si2H6

Indexed keywords

EID: 0006206021     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2390     Document Type: Article

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