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Volumn 81, Issue 3-4, 2000, Pages 271-277
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Investigation of thermoelectric silicide thin films by means of analytical transmission electron microscopy
a
IFW DRESDEN
(Germany)
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Author keywords
Electron diffraction; Energy filtered imaging and diffraction; In situ specimen treatment
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Indexed keywords
AMORPHOUS FILMS;
ANNEALING;
CRYSTALLIZATION;
ELECTRIC CONDUCTIVITY;
ELECTRON DIFFRACTION;
IMAGING TECHNIQUES;
MICROSTRUCTURE;
RHENIUM COMPOUNDS;
SEMICONDUCTING SILICON;
SPUTTER DEPOSITION;
TEMPERATURE;
THIN FILMS;
ENERGY FILTERED IMAGING;
IN SITU ANNEALING;
RADIAL DISTRIBUTION FUNCTION;
TEMPERATURE COEFFICIENT;
THERMOELECTRIC SILICIDE;
TRANSMISSION ELECTRON MICROSCOPY;
RHENIUM COMPLEX;
SILICON;
ARTICLE;
FILM;
IMAGING;
TECHNIQUE;
TECHNOLOGY;
TRANSMISSION ELECTRON MICROSCOPY;
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EID: 0034106308
PISSN: 03043991
EISSN: None
Source Type: Journal
DOI: 10.1016/S0304-3991(99)00181-3 Document Type: Article |
Times cited : (7)
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References (11)
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