Electron microscopy analysis of the boundary layer structure of SrTiO3 semiconducting ceramic

Journal of Electron Microscopy

Volumn 49, Issue 1, 2000, Pages 73-84

  Kawasaki, M ^a   Yoshioka, T ^a   Sato, S ^b   Nomura, T ^b   Shiojiri, M ^c  

^a JEOL LTD   (Japan)

^b TDK CORPORATION   (Japan)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Boundary layer semiconducting ceramic condenser; Energy dispersive X ray spectroscopy; High angle annular dark field image; Secondary electron image; SrTiO3

Indexed keywords

ATOMS; BINARY ALLOYS; CERAMIC MATERIALS; COPPER OXIDES; DIFFUSION; ELECTRONS; ENERGY DISPERSIVE SPECTROSCOPY; FIELD EMISSION; FIELD EMISSION MICROSCOPES; GRAIN BOUNDARIES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; TERNARY ALLOYS; TITANIUM ALLOYS; X RAY DIFFRACTION;

BOUNDARY LAYER SEMICONDUCTING CERAMIC CONDENSER; BOUNDARY LAYER STRUCTURE; BULK MATERIALS; DIFFUSION LAYERS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; GRAIN-BOUNDARIES; HIGH RESOLUTION; HIGH-ANGLE ANNULAR DARK-FIELD IMAGES; METAL DIFFUSION; SECONDARY ELECTRON IMAGES;

SCANNING ELECTRON MICROSCOPY;

EID: 0034072355     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.jmicro.a023795     Document Type: Article

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