Transmission electron microscopy study of a semiconducting SrTiO3 ceramic condenser

Journal of Electron Microscopy

Volumn 47, Issue 6, 1998, Pages 603-610

  Hitomi, Atsushi ^a   Nomura, Takeshi ^a   Kawasaki, Masahiro ^b   Isshiki, Toshiyuki ^c   Nishio, Koji ^c   Shiojiri, Makoto ^c  

^a TDK CORPORATION   (Japan)

^b JEOL LTD   (Japan)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

EDS; Grain boundary; Semiconducting ceramic condenser; SrTiO3 ceramics; TEM

Indexed keywords

ATOMS; BOUNDARY LAYERS; CERAMIC MATERIALS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SINTERING;

CRYSTALLINE GRAINS; CU ATOMS; GRAIN-BOUNDARIES; NANOMETRES; O VACANCIES; OXYGEN PARTIAL PRESSURE; PB AND CU; SEMICONDUCTING CERAMIC CONDENSER; SRTIO3CERAMIC; TEM;

GRAIN BOUNDARIES;

EID: 0032422368     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.jmicro.a023633     Document Type: Article

References (3)

1. 3 ceramics. Phys. Stat. Sol. (a) 143: 245-253.
2. 3 ceramic varistors. J. Electron Microcs. 47: 101-110.
3. 3-based varistors. Electron Technol. 31: 170-175.