High-voltage performance of silicon detectors irradiated under bias

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 439, Issue 2, 2000, Pages 344-348

  Bloch, Ph ^a   Ciasnohova, A ^a   Jading, Y ^a   Peisert, A ^a   Golutvin, I ^b   Cheremukhin, A ^b   Sergueev, S ^b   Zamiatin, N ^b   Dauphin, G ^c   Safieh, J ^c  

^a CERN   (Switzerland)

^b JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^c CEA SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALPHA PARTICLES; ELECTRIC CHARGE; ELECTRIC POTENTIAL; NEUTRON IRRADIATION; PHOTONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES;

BETA PARTICLES; PHOTON IRRADIATION; PRESHOWER DETECTORS; SEMICONDUCTOR DETECTORS;

PARTICLE DETECTORS;

EID: 0033908738     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00904-3     Document Type: Article

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