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Journal of Materials Science

Volumn 35, Issue 5, 2000, Pages 1145-1152

Finite element analysis of characteristics of residual strains in cross-sectional specimens of strained-layer materials

(2) Chen, C R a Li, S X a

a INSTITUTE OF METAL RESEARCH (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; FINITE ELEMENT METHOD; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR SUPERLATTICES; STRAIN;

RESIDUAL STRAIN; STRAINED-LAYER MATERIALS;

STRESS RELAXATION;

EID: 0033907938 PISSN: 00222461 EISSN: None Source Type: Journal
DOI: 10.1023/A:1004720000076 Document Type: Article

Times cited : (3)

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