Analytical electron microscopy of Si1−xGex/Si heterostructures and local isolation structures

Materials Science and Technology (United Kingdom)

Volumn 11, Issue 4, 1995, Pages 400-406

  Armigliato, A ^a   Balboni, R ^a   Corticelli, F ^a   Frabboni, S ^b   Malvezzi, F ^b   Vanhellemont, J ^c  

^a CNR   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CONVERGENT-BEAM ELECTRON DIFFRACTION; ENERGY DISPERSIVE; GE CONCENTRATIONS; GROWTH DIRECTIONS; ISOLATION STRUCTURES; LATTICE STRAIN; PAD OXIDES; RUTHERFORD BACK-SCATTERING SPECTROMETRY; STRAIN TENSOR; STRAIN VALUES; THINNING PROCESS;

CRYSTALS; GERMANIUM; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

SILICON;

EID: 0040622586     PISSN: 02670836     EISSN: 17432847     Source Type: Journal    
DOI: 10.1179/mst.1995.11.4.400     Document Type: Article

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