-
1
-
-
0030690644
-
A fully integrated spiral-LC CMOS VCO set with prescaler for GSM and DCS-1800 systems
-
J. Craninckx, M. Steyaert, and H. Miyakawa, "A fully integrated spiral-LC CMOS VCO set with prescaler for GSM and DCS-1800 systems," in Proc. Custom Integrated Circuits Conf., 1997, pp. 403-406.
-
(1997)
Proc. Custom Integrated Circuits Conf.
, pp. 403-406
-
-
Craninckx, J.1
Steyaert, M.2
Miyakawa, H.3
-
2
-
-
0344211084
-
An 1.24-GHz monolithic CMOS VCO with phase noise of -137 dBc/Hz at a 3-MHz offset
-
Mar
-
C.-M. Hung and K. K. O, "An 1.24-GHz monolithic CMOS VCO with phase noise of -137 dBc/Hz at a 3-MHz offset." IEEE Microwave Guided Wave Lett., vol. 9, pp. 111-113, Mar 1999.
-
(1999)
IEEE Microwave Guided Wave Lett.
, vol.9
, pp. 111-113
-
-
Hung, C.-M.1
O, K.K.2
-
3
-
-
84886448065
-
Novel substrate contact structure for high-Q silicon-integrated spiral inductors
-
J. N. Burghartz, A. E. Ruehli, K. A. Jenkins, M. Soyuer, and D. Nguyen-Ngoc, "Novel substrate contact structure for high-Q silicon-integrated spiral inductors," in Proc. IEEE Int. Electron Devices Meeting, 1997, pp. 55-58.
-
Proc. IEEE Int. Electron Devices Meeting
, vol.1997
, pp. 55-58
-
-
Burghartz, J.N.1
Ruehli, A.E.2
Jenkins, K.A.3
Soyuer, M.4
Nguyen-Ngoc, D.5
-
4
-
-
0031343174
-
On-chip spiral inductors with patterned ground shields for Si-based RF ICs
-
C. P. Yue and S. S. Wong, "On-chip spiral inductors with patterned ground shields for Si-based RF ICs," in Proc. IEEE Symp. VLSI Circuits, 1997, pp. 85-86.
-
(1997)
Proc. IEEE Symp. Vlsi Circuits
, pp. 85-86
-
-
Yue, C.P.1
Wong, S.S.2
-
5
-
-
0032139494
-
Estimation methods for quality factors of inductors fabricated in silicon integrated circuit process technologies
-
Aug.
-
K. K. O. "Estimation methods for quality factors of inductors fabricated in silicon integrated circuit process technologies," IEEE J. Solid-State Circuits, vol. 33, pp. 1249-1252, Aug. 1998.
-
(1998)
IEEE J. Solid-state Circuits
, vol.33
, pp. 1249-1252
-
-
O, K.K.1
-
6
-
-
0032277981
-
Application of a new circuit design oriented Q extraction technique to inductors in silicon ICV
-
T. Chen, K. Kim, and K. K. O, "Application of a new circuit design oriented Q extraction technique to inductors in silicon ICV in Proc. IEEE Int. Electron Devices Meeting, 1998, pp. 527-530.
-
(1998)
Proc. IEEE Int. Electron Devices Meeting
, pp. 527-530
-
-
Chen, T.1
Kim, K.2
O, K.K.3
-
7
-
-
0029516517
-
A 1.8-GHz CMOS low-phase-noise voltage-controlled oscillator with prescaler
-
Aug.
-
J. Craninckx and M. Steyaert, "A 1.8-GHz CMOS low-phase-noise voltage-controlled oscillator with prescaler," IEEE J. Solid-State Circuits, vol. 30, pp. 1474-1482, Aug. 1995.
-
(1995)
IEEE J. Solid-state Circuits
, vol.30
, pp. 1474-1482
-
-
Craninckx, J.1
Steyaert, M.2
-
8
-
-
0031629809
-
A 1.4-GHz 3-mW CMOS LC low phase noise VCO using tapped bond wire inductance
-
Aug.
-
T. I. Ahrens and T. H. Lee, "A 1.4-GHz 3-mW CMOS LC low phase noise VCO using tapped bond wire inductance," in Proc. Int. Symp. Low Power Electronics and Design, Aug. 1998, pp. 16-19.
-
(1998)
Proc. Int. Symp. Low Power Electronics and Design
, pp. 16-19
-
-
Ahrens, T.I.1
Lee, T.H.2
-
9
-
-
0026835062
-
A 1.8-GHz monolithic LC voltage-controlled oscillator
-
Aug.
-
N. M. Nguyen and R. G. Meyer, "A 1.8-GHz monolithic LC voltage-controlled oscillator," IEEE J. Solid-State Circuits, vol. 27, pp. 444-450, Aug. 1992.
-
(1992)
IEEE J. Solid-state Circuits
, vol.27
, pp. 444-450
-
-
Nguyen, N.M.1
Meyer, R.G.2
-
10
-
-
0032073125
-
High-Q capacitors implemented in a CMOS process for low power wireless applications
-
May
-
C.-M. Hung, Y-C. Ho, I-C. Wu, and K. K. O, "High-Q capacitors implemented in a CMOS process for low power wireless applications," IEEE Trans. Microwave Theory Tech., vol. 46, pp. 505-511, May 1998.
-
(1998)
IEEE Trans. Microwave Theory Tech.
, vol.46
, pp. 505-511
-
-
Hung, C.-M.1
Ho, Y.-C.2
Wu, I.-C.3
O, K.K.4
-
11
-
-
0032307874
-
A bond-pad structure for reducing effects of substrate resistance on LNA performant e in a silicon bipolar technology
-
J. T. Colvin, S. S. Bhatia, and K. K. O, "A bond-pad structure for reducing effects of substrate resistance on LNA performant e in a silicon bipolar technology," in Proc. Bipolar/BiCMOS Circuits and Technology Meeting, 1998, pp. 109-112.
-
(1998)
Proc. Bipolar/BiCMOS Circuits and Technology Meeting
, pp. 109-112
-
-
Colvin, J.T.1
Bhatia, S.S.2
O, K.K.3
-
13
-
-
0031073123
-
Silicon bipolar VCO family for 1.1 to 2.2 GHz with fully-integrated tank and tuning circuits
-
B. Jansen, K. Negus, and D. Lee, "Silicon bipolar VCO family for 1.1 to 2.2 GHz with fully-integrated tank and tuning circuits," in Proc. IEEE Int. Solid-State Circuits Conf., 1997, pp. 392-393.
-
(1997)
Proc. IEEE Int. Solid-state Circuits Conf.
, pp. 392-393
-
-
Jansen, B.1
Negus, K.2
Lee, D.3
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