Ultrahigh vacuum chemical vapor deposition of rhodium thin films on clean and TiO2-covered Si(111)

Thin Solid Films

Volumn 208, Issue 2, 1992, Pages 172-176

  Lu, Jiong Ping ^a   Chu, Polly W ^a   Raj, Rishi ^a   Gysling, Henry ^b  

^a Department of Obstetrics Gynecology   (United States)

^b EASTMAN KODAK COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METALLIC FILMS; SEMICONDUCTING SILICON; SPECTROSCOPY, AUGER ELECTRON; TITANIUM COMPOUNDS;

TITANIUM DIOXIDES;

RHODIUM AND ALLOYS;

EID: 0026821307     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(92)90638-R     Document Type: Article

References (32)

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3. AGARD Lect. Ser. 106
4. Vapor Deposition of Metals by Hydrogen Reduction of Metal Chelates
5. Low Temperature Silicon Epitaxy by Hot Wall Ultrahigh Vacuum/Low Pressure Chemical Vapor Deposition Techniques: Surface Optimization
6. A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs