Scanning mid-IR-laser microscopy: An efficient tool for materials studies in silicon-based photonics and photovoltaics

Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 361-365

  Astafiev, O V ^a,b   Kalinushkin, V P ^a   Yuryev, V A ^a,b  

^a PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; INFRARED IMAGING; INTEGRATED OPTOELECTRONICS; LIGHT ABSORPTION; LIGHT SCATTERING; NONDESTRUCTIVE EXAMINATION; OPTICAL MICROSCOPY;

MID-INFRARED LASER MICROSCOPY;

SEMICONDUCTING SILICON;

EID: 0033904481     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00711-3     Document Type: Article

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