Elastic mid-infrared light scattering: A basis for microscopy of large-scale electrically active defects in semiconducting materials

Review of Scientific Instruments

Volumn 70, Issue 11, 1999, Pages 4331-4343

  Kalinushkin, V P ^b   Yuryev, V A ^b   Astafiev, O V ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042722460     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1150076     Document Type: Article

References (86)

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