The influences of Zn-dopants on the lattice constant and surface morphology in Zn-doped AlGaAs grown by MOCVD

Journal of Crystal Growth

Volumn 179, Issue 1-2, 1997, Pages 67-71

  Wang, Chengxin ^a   Huang, Baibiao ^a   Huang, Gensheng ^a   Qin, Xiaoyan ^a   Yu, Shuqin ^a   Jiang, Minhua ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

AlGaAs; Lattice constant shift; MOCVD; Surface morphology; Zn dopants

Indexed keywords

LATTICE CONSTANTS; MORPHOLOGY; OPTOELECTRONIC DEVICES; SEMICONDUCTING INTERMETALLICS; SEMICONDUCTOR DOPING;

DOPANTS; LATTICE CONSTANT SHIFT;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0031195444     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00097-3     Document Type: Article

References (9)

1. G.S. Cargil, III, A. Segmuller, T.F. Kuech and T.N. Theis, Phys. Rev. B 46 (1992) 10078.
2. M. Leszczyndki, J. Bak-Misiuk, J. Domagala, J. Muszalski, M. Kaniewska and J. Marczewski, Appl. Phys. Lett. 67 (1995) 539.
3. Y. Nishikawa, M. Ishikawa, Y. Tsuburai and Y. Kokubun, J. Crystal Growth 100 (1990) 63.
4. Y. Nishikawa, M. Ishikawa, H. Sugawara, G.-i. Hatakoshi and Y. Kokubun, J. Crystal Growth 112 (1991) 628.
5. J.M. Olson, A. Kibbler and S. Kartz, in: Proc. 19th IEEE Photovoltaic Specialists Conf., New Orleans (1987) 285.
6. L. Pauling, in: The Nature of the Chemical Bond and the - Structure of Molecules and Crystals (Cornell University Press, Ithaca, NY, 1960) p. 2461.
7. R.A. Logan, S.N.G. Chu, M. Geva, N.T. Ha and C.D. Thurmond, J. Appl. Phys. 79 (1996) 1371.
8. S. Nakahara, Mater. Lett. 3 (1984) 40.
9. H.H. Park, K.H. Lee, J.K. Lee, Y.T. Lee, E.H. Lee, J.Y. Lee and S.K. Hong, J. Appl. Phys. 72 (1992) 4063.