The effect of gravity on crystal growth of InGaAs by the Bridgman method

Journal of Crystal Growth

Volumn 167, Issue 1-2, 1996, Pages 357-360

  Fujiwara, S ^a   Araki, T ^a   Tatsumi, M ^a   Irikura, M ^a   Matsumoto, K ^a   Murai, S ^a   Shirakawa, T ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL STRUCTURE; GRAVITATIONAL EFFECTS; MICROGRAVITY PROCESSING; NATURAL CONVECTION; POLYCRYSTALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

BRIDGMAN METHOD;

CRYSTAL GROWTH FROM MELT;

EID: 0030565266     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00410-1     Document Type: Article

References (9)

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