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Volumn 21, Issue 2, 1998, Pages 90-96

Thermal modeling of a double-neck large diameter crystal growth process

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); HEAT CONDUCTION; MATHEMATICAL MODELS; TEMPERATURE DISTRIBUTION; TENSILE STRENGTH; TORSIONAL STRESS; YIELD STRESS;

EID: 0032050459     PISSN: 10834400     EISSN: None     Source Type: Journal    
DOI: 10.1109/3476.681384     Document Type: Article
Times cited : (1)

References (10)
  • 1
    • 36849128786 scopus 로고
    • W. C. Dash Growth of silicon crystals free from dislocations J. Appl. Phys. 30 459 474 1959
    • (1959) , vol.30 , pp. 459-474
    • Dash, W.C.1
  • 2
    • 85176680254 scopus 로고
    • Committee No. 145 Crystal Process. Eval. Technol.𔃸th Sem. Mater.
    • SEMATECH
    • S. Takasu Introductory remarks, heat processing for large-sized silicon wafers Committee No. 145 Crystal Process. Eval. Technol.𔃸th Sem. Mater. 5 10 1995 SEMATECH Tech. Rep. 95092968A-XFR
    • (1995) , pp. 5-10
    • Takasu, S.1
  • 3
    • 0040894131 scopus 로고
    • P. A. Ramachandran M. P. Dudukovic´ Simulation of temperature distribution in crystals grown by Czochralski method J. Cryst. Growth 71 399 408 1985
    • (1985) , vol.71 , pp. 399-408
    • Ramachandran, P.A.1    Dudukovic´2    , M.P.3
  • 4
    • 0012565346 scopus 로고
    • R. K. Srivastava P. A. Ramachandran M. P. Dudukovic´ Interface shape in Czochralski grown crystals: Effect of conduction and radiation J. Cryst. Growth 73 487 504 1985
    • (1985) , vol.73 , pp. 487-504
    • Srivastava, R.K.1    Ramachandran, P.A.2    Dudukovic´3    , M.P.4
  • 5
    • 85176678110 scopus 로고
    • Innovative Research, Inc. MN, Minneapolis
    • microCOMPACT 1992 Innovative Research, Inc. MN, Minneapolis
    • (1992)
  • 6
    • 0027702302 scopus 로고
    • W. Wijaranakula A real-time simulation of point defect reactions near the solid and melt interface of a 200 mm diameter Czochralski silicon crystal J. Electrochem. Soc. 140 11 3306 3316 Nov. 1993
    • (1993) , vol.140 , Issue.11 , pp. 3306-3316
    • Wijaranakula, W.1
  • 7
    • 0026117959 scopus 로고
    • M. Watanabe Technical trends in large diameter silicon wafers: Part I Solid State Technol. 34 3 69 73 1991
    • (1991) , vol.34 , Issue.3 , pp. 69-73
    • Watanabe, M.1
  • 8
    • 0000943694 scopus 로고
    • W. Wijaranakula Morphology of oxide precipitates in Czochralski silicon degenerately doped with boron J. Appl. Phys. 72 9 4026 4029 1992
    • (1992) , vol.72 , Issue.9 , pp. 4026-4029
    • Wijaranakula, W.1
  • 9
    • 85176670382 scopus 로고
    • McGraw-Hill New York
    • B. Gebhart Heat Transfer. 117 122 1961 McGraw-Hill New York
    • (1961) , pp. 117-122
    • Gebhart, B.1
  • 10
    • 0000527480 scopus 로고
    • G. Williams R. E. Reusser Heat transfer in silicon Czochralski crystal growth J. Cryst. Growth 64 448 460 1983
    • (1983) , vol.64 , pp. 448-460
    • Williams, G.1    Reusser, R.E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.