Modeling studies of PVT growth of ZnSe: Current status and future course

Journal of Crystal Growth

Volumn 208, Issue 1, 2000, Pages 269-281

  Ramachandran, N ^a   Su, Ching Hua ^b   Lehoczky, S L ^b  

^a UNIVERSITIES SPACE RESEARCH ASSOCIATION   (United States)

^b NASA MARSHALL SPACE FLIGHT CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUOYANCY; CRYSTAL GROWTH; CRYSTAL ORIENTATION; GRAVITATIONAL EFFECTS; MATHEMATICAL MODELS; MORPHOLOGY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SHEAR FLOW; TRANSPORT PROPERTIES; VAPORS;

PHYSICAL VAPOR TRANSPORT (PVT); ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0033898279     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00512-6     Document Type: Article

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