The influence of reduced gravity on the crystal growth of semiconductors - A review of U.S. flight experiments

Microgravity Science and Technology

Volumn 11, Issue 1, 1998, Pages 17-22

  Su, C H ^a   Lehoczky, S L ^a  

^a NASA MARSHALL SPACE FLIGHT CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

DOPANT SEGREGATION;

MICROGRAVITY PROCESSING;

EID: 0032313287     PISSN: 09380108     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (36)

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