Defects in CuGaSe2 thin films grown by MOCVD

Thin Solid Films

Volumn 361, Issue , 2000, Pages 426-431

  Bauknecht, A ^a   Siebentritt, S ^a   Gerhard, A ^a   Harneit, W ^a   Brehme, S ^a   Albert, J ^a   Rushworth, S ^b   Lux Steiner, M Ch ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b Epichem Limited   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; HALL EFFECT; IONIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE DIAGRAMS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STOICHIOMETRY; THIN FILMS;

HALL MOBILITY; RADIATIVE RECOMBINATION;

SEMICONDUCTING FILMS;

EID: 0033897029     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00752-X     Document Type: Article

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