Evolution of vacancy-like defects in helium-implanted (100) silicon studied by thermal desorption spectrometry

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 71, Issue 1-3, 2000, Pages 207-212

  Corni, F ^a   Calzolari, G ^a   Gambetta, F ^a   Nobili, C ^a   Tonini, R ^a   Zapparoli, M ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRACKS; DESORPTION; HELIUM; ION BOMBARDMENT; ION IMPLANTATION; POINT DEFECTS; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

ELASTIC RECOIL DETECTION; THERMAL DESORPTION SPECTROMETRY (TDS);

SEMICONDUCTING SILICON;

EID: 0033897006     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00376-1     Document Type: Article

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