Photoluminescence from Si ion irradiated SiO2/Si/SiO2 films with elevated substrate temperature

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 69, Issue , 2000, Pages 401-405

  Kim, H B ^a   Son, J H ^a   Chae, K H ^a   Jeong, J Y ^a   Lee, W S ^a   Im, S ^a   Song, J H ^a   Whang, C N ^a,b  

^a Yonsei University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DIAMAGNETISM; ION BOMBARDMENT; IONIC CONDUCTION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

DIAMAGNETIC DEFECT;

SEMICONDUCTING FILMS;

EID: 0033896109     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00309-8     Document Type: Article

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