Effect of Sb pre-deposition on the compositional profiles in MOVPE-grown InAsSb/InAs(1 1 1) multi-quantum wells

Journal of Crystal Growth

Volumn 208, Issue 1, 2000, Pages 79-84

  Pillai, M R ^a   Theiring, Scott C ^a   Barnett, S A ^a   Wessels, Bruce W ^a   Desikan, Arvind ^b   Kvam, Eric P ^b  

^a Northwestern University   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; COMPOSITION EFFECTS; COMPUTER SIMULATION; CRYSTAL LATTICES; DEPOSITION; INTERFACES (MATERIALS); KINEMATICS; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

INDIUM ARSENIC ANTIMONIDE; INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033895554     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00452-2     Document Type: Article

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