Spin-lattice relaxation of 29Si near porous silicon surface

Applied Surface Science

Volumn 153, Issue 4, 2000, Pages 268-274

  Tsuboi, Takashi ^a   Sakka, Tetsuo ^a   Mabuchi, Mahito ^b   Ogata, Yukio H ^a  

^a KYOTO UNIVERSITY   (Japan)

^b NIIHAMA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ANNEALING; CRYSTAL LATTICES; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; OXIDATION; PROTONS; RELAXATION PROCESSES; SILICA;

CHEMICAL SHIFT;

POROUS SILICON;

EID: 0033895439     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00409-2     Document Type: Article

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