Polysilicon thin-film transistors processed at low temperature (≤660°C) using solid-phase crystallization in wet oxygen atmosphere

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 6 A, 1996, Pages

  Hamada, H ^a   Sasaki, A ^a   Okita, Y ^a   Niina, T ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; HYDROGENATION; LOW TEMPERATURE OPERATIONS; OXYGEN; SILICON; THIN FILMS;

LOW-TEMPERATURE PROCESS; POLYSILICON THIN-FILM TRANSISTORS; SPIN DENSITY;

TRANSISTORS;

EID: 0030173329     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l680     Document Type: Article

References (11)